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| MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM100TU-24H IC ................................................................... 100A VCES ....................................................... 1200V Insulated Type 6-elements in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM N 11 21.7 E G P 11 E 21.7 G 11 14.4 E 17 3.75 107 90 0.25 23 12 12 4-5.5 MOUNTING HOLES 4 GuP EuP GvP EvP GwP EwP G G E G E G E GuN EuN GvN EvN GwN EwN P GuP EuP GvP EvP GwP EwP 80 0.25 102 48.5 U V GvN EvN W GwN EwN 0.5 N GuN EuN 3.75 U V W CIRCUIT DIAGRAM 12 5-M5NUTS TC measured point 2.8 11 23 21.7 12 23 11 12 0.8 11 4 TC measured point 29 -0.5 +1 21.7 7.1 LABEL 26 8.1 Feb. 2009 1 MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- (Tj = 25C, unless otherwise specified) Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1200 20 100 200 100 200 650 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 Unit V V A A A A W C C Vrms N*m N*m g (Note 1) (Note 1) -- -- Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES Item (Tj = 25C, unless otherwise specified) Test Conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = 15V RG = 3.1 Resistive load IE = 100A, VGE = 0V IE = 100A, die / dt = -200A / s Junction to case, IGBT part (Per 1/6 module) Junction to case, FWDi part (Per 1/6 module) Case to heat sink, conductive grease applied (Per 1/6 module) (Note 6) (Note 4) Tj = 25C Tj = 125C Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6 -- 2.9 2.85 -- -- -- 375 -- -- -- -- -- -- 0.55 -- -- 0.09 Max 1 7.5 0.5 3.7 -- 15 5 3 -- 100 200 300 350 3.2 300 -- 0.19 0.35 -- Unit mA V A V nF nF nF nC ns ns ns ns V ns C K/W K/W K/W Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) VGE = 20 (V) Tj = 25C 15 12 VCE = 10V 150 11 100 10 50 9 8 0 0 2 4 6 8 10 150 100 50 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C 5 VGE = 15V Tj = 25C Tj = 125C 4 8 3 6 IC = 200A IC = 100A 2 IC = 40A 2 4 1 0 0 50 100 150 200 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25C VGE = 0V 101 7 5 3 2 Cies 102 7 5 3 2 100 7 5 3 2 Coes Cres 101 1.0 1.5 2.0 2.5 3.0 3.5 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 tf td(off) td(on) tr REVERSE RECOVERY TIME trr (ns) Tj = 125C SWITCHING TIMES (ns) 3 2 5 3 2 5 3 2 102 7 5 3 2 trr 102 7 5 3 2 101 Irr 7 5 3 2 101 7 5 3 2 100 VCC = 600V VGE = 15V RG = 3.1 7 101 2 3 5 7 102 2 3 57 101 7 101 2 3 5 7 102 100 2 3 57 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.19K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.35K/W 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A 15 VCC = 400V VCC = 600V 10 5 0 0 100 200 300 400 500 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 - di /dt = 200A /s 7 7 Tj = 25C |
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